罗斌森
罗斌森
  • BD679AS

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Active
    Transistor Type : NPN - Darlington
    Current - Collector (Ic) (Max) : 4A
    Voltage - Collector Emitter Breakdown (Max) : 80V
    Vce Saturation (Max) @ Ib, Ic : 2.8V @ 40mA, 2A
    Current - Collector Cutoff (Max) : 500μA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 750 @ 2A, 3V
    Power - Max : 40W
    Operating Temperature : 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-225AA, TO-126-3
    Supplier Device Package : TO-126-3

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