罗斌森
  • BD676G

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Active
    Transistor Type : PNP - Darlington
    Current - Collector (Ic) (Max) : 4A
    Voltage - Collector Emitter Breakdown (Max) : 45V
    Vce Saturation (Max) @ Ib, Ic : 2.5V @ 30mA, 1.5A
    Current - Collector Cutoff (Max) : 500μA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 750 @ 1.5A, 3V
    Power - Max : 40W
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-225AA, TO-126-3
    Supplier Device Package : TO-225AA

极速报价

型号
品牌 封装 批号 查看
MC74LVX132DR2 ON 14-SOIC New 详细
BUH51G ON TO-225AA New 详细
NUF2015W1T2G ON New 详细
DM74AS257N ON 16-PDIP New 详细
NCP7815CTG ON TO-220AB New 详细
MSD42WT1G ON SC-70-3 (SOT323) New 详细
CAT5221WI-10-T1 ON 20-SOIC New 详细
BC368_D27Z ON TO-92-3 New 详细
ESD5Z6.0T5G ON SOD-523 New 详细
BZX84C11LT1G ON SOT-23-3 (TO-236) New 详细
MC78LC27NTR ON 5-TSOP New 详细
MJE5731AG ON TO-220AB New 详细
FDMF5822DC ON 31-PQFN (5x5) New 详细
MC74AC157MELG ON 16-SOEIAJ New 详细
MSA5380C ON New 详细
CS5155GDR16 ON 16-SOIC New 详细
BZX79C30 ON DO-35 New 详细
74VHCT541AMX ON 20-SOIC New 详细
1.5KE12ARL4 ON Axial New 详细
HUF75321D3ST ON TO-252AA New 详细