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BD435G
- Manufacturer : ON Semiconductor
Packaging : Bulk
Part Status : Active
Transistor Type : NPN
Current - Collector (Ic) (Max) : 4A
Voltage - Collector Emitter Breakdown (Max) : 32V
Vce Saturation (Max) @ Ib, Ic : 500mV @ 200mA, 2A
Current - Collector Cutoff (Max) : 100μA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 85 @ 500mA, 1V
Power - Max : 36W
Frequency - Transition : 3MHz
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-225AA, TO-126-3
Supplier Device Package : TO-225AA
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