产品系列
CSD88539NDT
- Manufacturer : Texas Instruments
Packaging : Cut Tape (CT)
Alternate Packaging
Series : NexFET?
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 15A
Rds On (Max) @ Id, Vgs : 28 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id : 3.6V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 9.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 741pF @ 30V
Power - Max : 2.1W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package : 8-SO
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