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产品系列
CSD19538Q2T
- Manufacturer : Texas Instruments
Packaging : Cut Tape (CT)
Alternate Packaging
Series : NexFET?
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 13.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 59 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id : 3.8V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 5.6nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 454pF @ 50V
Power Dissipation (Max) : 2.5W (Ta), 20.2W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 6-WSON (2x2)
Package / Case : 6-WDFN Exposed Pad
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| LM4876M/NOPB | TI | 8-SOIC | New | 详细 | |
| SN75175DR | TI | 16-SOIC | New | 详细 |
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