产品系列
产品系列
CSD19536KTTT
- Manufacturer : Texas Instruments
Packaging : Cut Tape (CT)
Alternate Packaging
Series : NexFET?
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 200A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 2.4 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id : 3.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 153nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 12000pF @ 50V
Power Dissipation (Max) : 375W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DDPAK/TO-263-3
Package / Case : TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
型号 |
品牌 | 封装 | 批号 | 查看 | |
|---|---|---|---|---|---|
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| AMC1304L05EVM | TI | New | 详细 | ||
| LM2575SX-ADJ | TI | DDPAK/TO-263-5 | New | 详细 | |
| LM3S1512-IQC25-A2 | TI | 100-LQFP (14x14) | New | 详细 | |
| LM2670S-3.3/NOPB | TI | DDPAK/TO-263-7 | New | 详细 | |
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