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  • CSD19534Q5A

  • Manufacturer : Texas Instruments
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Series : NexFET?
    Part Status : Active
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 100V
    Current - Continuous Drain (Id) @ 25°C : 50A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V
    Rds On (Max) @ Id, Vgs : 15.1 mOhm @ 10A, 10V
    Vgs(th) (Max) @ Id : 3.4V @ 250μA
    Gate Charge (Qg) (Max) @ Vgs : 22nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 1680pF @ 50V
    Power Dissipation (Max) : 3.2W (Ta), 63W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 8-VSONP (5x6)
    Package / Case : 8-PowerTDFN

极速报价

型号
品牌 封装 批号 查看
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UCC2580N-1 TI 16-PDIP New 详细
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EKT-EVALBOT TI New 详细
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TPA2025D1EVM TI New 详细
OPA4353EA/250 TI 16-SSOP New 详细
TPS65056EVM-195 TI New 详细
ISO7841FDWR TI 16-SOIC New 详细
UC2823QG3 TI 20-PLCC (9x9) New 详细
TPL5010QDDCTQ1 TI TSOT-23-6 New 详细
TLC2274MDRG4 TI 14-SOIC New 详细