罗斌森
  • BQ4013MA-120

  • Manufacturer : Texas Instruments
    Packaging : Tray
    Part Status : Obsolete
    Memory Type : Non-Volatile
    Memory Format : NVSRAM
    Technology : NVSRAM (Non-Volatile SRAM)
    Memory Size : 1Mb (128K x 8)
    Write Cycle Time - Word, Page : 120ns
    Access Time : 120ns
    Memory Interface : Parallel
    Voltage - Supply : 4.75V ~ 5.5V
    Operating Temperature : 0°C ~ 70°C (TA)
    Mounting Type : Through Hole
    Package / Case : 32-DIP Module (0.61", 15.49mm)
    Supplier Device Package : 32-DIP Module (18.42x42.8)

极速报价

型号
品牌 封装 批号 查看
LM49151TL/NOPB TI 20-DSBGA New 详细
LP3893ESX-1.8/NOPB TI DDPAK/TO-263-5 New 详细
SN75LVDS83ADGG TI 56-TSSOP New 详细
MC1458P TI 8-PDIP New 详细
LM3S9B90-IBZ80-C3 TI 108-BGA (10x10) New 详细
DAC0832LCN TI 20-DIP New 详细
CCZACC06A1RTC TI 48-VQFN (7x7) New 详细
TLV2772AIP TI 8-PDIP New 详细
ADS8472IBRGZT TI 48-VQFN (7x7) New 详细
UA78L10ACDR TI 8-SOIC New 详细
PCA9546ADGVR TI 16-TVSOP New 详细
DRV632PWR TI 14-TSSOP New 详细
LP3893ESX-1.2/NOPB TI DDPAK/TO-263-3 New 详细
TLV2404IN TI 14-PDIP New 详细
TLV2455AIDR TI 16-SOIC New 详细
LM4040BIM3X-10 TI SOT-23-3 New 详细
SN75HVD12D TI 8-SOIC New 详细
LM536355QRNLTQ1 TI 22-VQFN-HR (5x4) New 详细
SN65HVD1793D TI 14-SOIC New 详细
SN65HVD1470DR TI 14-SOIC New 详细