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产品系列
NVC3S5A51PLZT1G
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id : 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 6nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 262pF @ 20V
Power Dissipation (Max) : 1.2W (Ta)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 3-CPH
Package / Case : TO-236-3, SC-59, SOT-23-3
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