产品系列
产品系列
2N7002WT1G
- Manufacturer : ON Semiconductor
Packaging : Cut Tape (CT)
Alternate Packaging
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 60V
Current - Continuous Drain (Id) @ 25°C : 310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250μA
Gate Charge (Qg) (Max) @ Vgs : 0.7nC @ 4.5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 24.5pF @ 20V
Power Dissipation (Max) : 280mW (Tj)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SC-70-3 (SOT323)
Package / Case : SC-70, SOT-323
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