罗斌森
  • NSVBSS63LT1G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    Transistor Type : PNP
    Current - Collector (Ic) (Max) : 100mA
    Voltage - Collector Emitter Breakdown (Max) : 100V
    Vce Saturation (Max) @ Ib, Ic : 250mV @ 2.5mA, 25mA
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 25mA, 1V
    Power - Max : 225mW
    Frequency - Transition : 95MHz
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : TO-236-3, SC-59, SOT-23-3
    Supplier Device Package : SOT-23-3 (TO-236)

极速报价

型号
品牌 封装 批号 查看
FSLV16211MTD ON 56-TSSOP New 详细
HCPL2731W ON 8-DIP New 详细
NCP629FC28T2G ON 5-FlipChip New 详细
NCV4269AD150G ON 8-SOIC New 详细
MC14050BDR2G ON 16-SOIC New 详细
MM74HC08N ON 14-PDIP New 详细
SL24T3 ON SOT-23-3 (TO-236) New 详细
NCP1014STBUCGEVB ON New 详细
NBXHGA019LNHTAG ON 6-CLCC (7x5) New 详细
NV25040DWHFT3G ON 8-SOIC New 详细
74LCX27MX ON 14-SOIC New 详细
FPF2213 ON 6-MicroFET (2x2) New 详细
H11B815300W ON 4-DIP New 详细
74F521SC ON New 详细
NLAS5213BUSG ON US8 New 详细
MBR130LSFT1H ON New 详细
FSA2467UMX ON 16-UMLP (1.8x2.6) New 详细
74F86PC ON 14-PDIP New 详细
1N4151_T50R ON DO-35 New 详细
NRVA4003T3G ON SMA New 详细