罗斌森
  • 2N6518BU

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Obsolete
    Transistor Type : PNP
    Current - Collector (Ic) (Max) : 500mA
    Voltage - Collector Emitter Breakdown (Max) : 250V
    Vce Saturation (Max) @ Ib, Ic : 1V @ 5mA, 50mA
    Current - Collector Cutoff (Max) : 50nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 45 @ 50mA, 10V
    Power - Max : 625mW
    Frequency - Transition : 200MHz
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA)
    Supplier Device Package : TO-92-3

极速报价

型号
品牌 封装 批号 查看
NLU1G07BMX1TCG ON 6-ULLGA (1.2x1) New 详细
NCP706MX21TAGEVB ON New 详细
H11D4S ON 6-SMD New 详细
NL17SZ04XV5T2G ON SOT-553 New 详细
1N6008B_T50R ON DO-35 New 详细
NCS2003SN2T1G ON SOT-23-5 New 详细
FGH40N60SMD ON TO-247-3 New 详细
BC808-40LT1G ON SOT-23-3 (TO-236) New 详细
NCP583XV15T2G ON SOT-563 New 详细
FEBFAN6100QMPX-CH07U15A-GEVB ON New 详细
1N759ATR ON DO-35 New 详细
LV5069JA-ZH ON 16-SSOP New 详细
NCP4624DMU30TCG ON 4-UDFN (1.0x1.0) New 详细
EFC6617R-TF ON New 详细
LV5813TT-TE-L-H ON 8-MSOP New 详细
CS5174GD8 ON 8-SOIC New 详细
MC33560DTBR2G ON 24-TSSOP New 详细
NLV17SZ74USG ON New 详细
MC74ACT241DW ON 20-SOIC New 详细
NCP308SNADJT1G ON 6-TSOP New 详细