罗斌森
  • NSBC114EDP6T5G

  • Manufacturer : ON Semiconductor
    Packaging : Cut Tape (CT)
    Alternate Packaging
    Part Status : Active
    Transistor Type : 2 NPN - Pre-Biased (Dual)
    Current - Collector (Ic) (Max) : 100mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Resistor - Base (R1) : 10 kOhms
    Resistor - Emitter Base (R2) : 10 kOhms
    DC Current Gain (hFE) (Min) @ Ic, Vce : 35 @ 5mA, 10V
    Vce Saturation (Max) @ Ib, Ic : 250mV @ 300μA, 10mA
    Current - Collector Cutoff (Max) : 500nA
    Power - Max : 408mW
    Package / Case : SOT-963
    Supplier Device Package : SOT-963

极速报价

型号
品牌 封装 批号 查看
1N4448 ON DO-35 New 详细
NTS260ESFT3G ON SOD-123FL New 详细
FQPF19N10L ON TO-220F New 详细
MBR120VLSFT1 ON SOD-123L New 详细
MAX829EUK ON 5-TSOP New 详细
BC639-16ZL1 ON TO-92-3 New 详细
NCP4626HMX050TCG ON 6-XDFN (1.6x1.6) New 详细
NCV8177BMX120TCG ON 4-XDFN (1x1) New 详细
H11N3TM ON 6-DIP New 详细
2N6488G ON TO-220AB New 详细
FQD6N60CTM-WS ON D-Pak New 详细
CAT3200TDI-GT3 ON TSOT-23-6 New 详细
MM5Z2V4T1 ON SOD-523 New 详细
MC74HC541ADWG ON 20-SOIC New 详细
MURD620CT1 ON DPAK New 详细
BC639ZL1 ON TO-92-3 New 详细
FSTUD32450GX ON 114-BGA (16x5.5) New 详细
CAT5111VI50 ON New 详细
QSB34CGR ON New 详细
MC74VHCT540AM ON SOEIAJ-20 New 详细