罗斌森
  • 2N6052G

  • Manufacturer : ON Semiconductor
    Packaging : Tray
    Part Status : Active
    Transistor Type : PNP - Darlington
    Current - Collector (Ic) (Max) : 12A
    Voltage - Collector Emitter Breakdown (Max) : 100V
    Vce Saturation (Max) @ Ib, Ic : 3V @ 120mA, 12A
    Current - Collector Cutoff (Max) : 1mA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 750 @ 6A, 3V
    Power - Max : 150W
    Operating Temperature : -65°C ~ 200°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-204AA, TO-3
    Supplier Device Package : TO-204 (TO-3)

极速报价

型号
品牌 封装 批号 查看
NCS5000SNT1G ON 6-TSOP New 详细
MC10EP31DTR2 ON New 详细
MJE5742 ON TO-220AB New 详细
NSV60601MZ4T1G ON SOT-223 New 详细
MC74HC595ADT ON 16-TSSOP New 详细
LMV981MU3TBG ON 8-ULLGA (1.5x1.5) New 详细
NL17SG32AMUTCG ON 6-UDFN (1.45x1) New 详细
NSVC2020JBT3G ON SMB New 详细
BC846AWT1 ON SC-70-3 (SOT323) New 详细
FOD2741A ON 8-DIP New 详细
MJF2955 ON TO-220FP New 详细
2N4401RLRPG ON TO-92-3 New 详细
NSR201MXT5G ON 2-X2DFN (1x0.6) New 详细
NCP7806CTG ON TO-220AB New 详细
74LCXZ2245MTCX ON 20-TSSOP New 详细
SGL60N90DG3TU ON TO-264-3 New 详细
FDP8878 ON TO-220-3 New 详细
TN2219A ON TO-226-3 New 详细
MMBT5210 ON SOT-23-3 New 详细
NYC008-6JG ON TO-92 New 详细