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产品系列
NGTB50N60S1WG
- Manufacturer : ON Semiconductor
Packaging : Tube
Part Status : Last Time Buy
IGBT Type : Trench
Voltage - Collector Emitter Breakdown (Max) : 600V
Current - Collector (Ic) (Max) : 100A
Current - Collector Pulsed (Icm) : 200A
Vce(on) (Max) @ Vge, Ic : 2V @ 15V, 50A
Power - Max : 417W
Switching Energy : 1.5mJ (on), 460μJ (off)
Input Type : Standard
Gate Charge : 220nC
Td (on/off) @ 25°C : 100ns/237ns
Test Condition : 400V, 50A, 10 Ohm, 15V
Reverse Recovery Time (trr) : 94ns
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-247-3
Supplier Device Package : TO-247-3
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