罗斌森
  • 2N5886G

  • Manufacturer : ON Semiconductor
    Packaging : Tray
    Part Status : Active
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 25A
    Voltage - Collector Emitter Breakdown (Max) : 80V
    Vce Saturation (Max) @ Ib, Ic : 4V @ 6.25A, 25A
    Current - Collector Cutoff (Max) : 2mA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 10A, 4V
    Power - Max : 200W
    Frequency - Transition : 4MHz
    Operating Temperature : -65°C ~ 200°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-204AA, TO-3
    Supplier Device Package : TO-204 (TO-3)

极速报价

型号
品牌 封装 批号 查看
FJN3303TA ON TO-92-3 New 详细
74LVX163MTC ON 16-TSSOP New 详细
FQPF7N20L ON TO-220F New 详细
H11F3 ON 6-DIP New 详细
MC74HC4040AFELG ON 16-SOEIAJ New 详细
NB2308AI5HDG ON 16-SOIC New 详细
LM385BD-2.5 ON 8-SOIC New 详细
FDC3535 ON SuperSOT?-6 New 详细
MBRM110LT1 ON Powermite New 详细
AR0132AT6R00XPEAH3-GEVB ON New 详细
NCP585DSN125T1G ON SOT-23-5 New 详细
NB6L295MMNGEVB ON New 详细
LB11988V-MPB-E ON 24-SSOPJ New 详细
EGP10F ON DO-41 New 详细
FAN7687AMX ON 14-SOIC New 详细
FLS0116MX ON 7-SOIC New 详细
TIL113W ON 6-DIP New 详细
NCP3335ADM180R2G ON Micro8? New 详细
FDFS2P753Z ON 8-SOIC New 详细
FOD8321R2 ON 5-SOP New 详细