罗斌森
  • 2N5551CBU

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Obsolete
    Transistor Type : NPN
    Current - Collector (Ic) (Max) : 600mA
    Voltage - Collector Emitter Breakdown (Max) : 160V
    Vce Saturation (Max) @ Ib, Ic : 200mV @ 5mA, 50mA
    Current - Collector Cutoff (Max) : 50nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
    Power - Max : 625mW
    Frequency - Transition : 100MHz
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA)
    Supplier Device Package : TO-92-3

极速报价

型号
品牌 封装 批号 查看
FDWS9509L-F085 ON 8-DFN (5.1x6.3) New 详细
MC33030DW ON 16-SOIC New 详细
MV8032 ON T-1 3/4 New 详细
CAT803JTBI-GT3 ON SOT-23-3 New 详细
FJV3110RMTF ON SOT-23-3 (TO-236) New 详细
MC78M12ACDTRKG ON DPAK New 详细
LM7908CT ON TO-220-3 New 详细
EVAL-ADT7483AEB ON New 详细
KSC1507O ON TO-220-3 New 详细
MMSZ4702 ON SOD-123 New 详细
1N5938B ON Axial New 详细
LMV321SQ3T1G ON SC-88A (SC-70-5/SOT-353) New 详细
LV5682P-E ON 25-HZIP New 详细
NCS8353MNTXG ON 32-QFN (5x5) New 详细
1N5237B_T26A ON DO-35 New 详细
NLAS5123MUR2G ON 6-UDFN (1.2x1) New 详细
MC33364D2R2G ON 8-SOIC New 详细
74VHC161MX ON 16-SOIC New 详细
FQD4P25TM-WS ON D-Pak New 详细
NLAS4685FCT1G ON 10-Microbump (1.97x1.47) New 详细