罗斌森
  • N01L63W2AT25I

  • Manufacturer : ON Semiconductor
    Packaging : Tray
    Part Status : Obsolete
    Memory Type : Volatile
    Memory Format : SRAM
    Technology : SRAM - Asynchronous
    Memory Size : 1Mb (64K x 16)
    Write Cycle Time - Word, Page : 55ns
    Access Time : 55ns
    Memory Interface : Parallel
    Voltage - Supply : 2.3V ~ 3.6V
    Operating Temperature : -40°C ~ 85°C (TA)
    Mounting Type : Surface Mount
    Package / Case : 44-TSOP (0.400", 10.16mm Width)
    Supplier Device Package : 44-TSOP II

极速报价

型号
品牌 封装 批号 查看
NSBC115EDXV6T1G ON SOT-563 New 详细
MM5Z5V6T1G ON SOD-523 New 详细
NTR4501NT3 ON SOT-23-3 (TO-236) New 详细
MC7806BD2TR4 ON D2PAK New 详细
BD37716STU ON TO-126-3 New 详细
FJV4104RMTF ON SOT-23-3 (TO-236) New 详细
BF420ZL1G ON TO-92-3 New 详细
FS8M ON TO-277-3 New 详细
NCP1653DR2G ON 8-SOIC New 详细
KSC1507YTU ON TO-220-3 New 详细
NTGS3443BT1G ON 6-TSOP New 详细
KSB1151YS ON TO-126-3 New 详细
SZMMSZ27T1G ON SOD-123 New 详细
KSA1182OMTF ON SOT-23-3 New 详细
NCP1530DM25R2G ON Micro8? New 详细
AS1217WMY ON New 详细
LV59033M-TLM-H ON 8-MFP New 详细
NCV8501D25G ON 8-SOIC New 详细
MPSL51_D26Z ON TO-92-3 New 详细
CS5201-1GT3 ON TO-220AB New 详细