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MJ11012G
- Manufacturer : ON Semiconductor
Packaging : Tray
Part Status : Active
Transistor Type : NPN - Darlington
Current - Collector (Ic) (Max) : 30A
Voltage - Collector Emitter Breakdown (Max) : 60V
Vce Saturation (Max) @ Ib, Ic : 4V @ 300mA, 30A
Current - Collector Cutoff (Max) : 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 20A, 5V
Power - Max : 200W
Frequency - Transition : 4MHz
Operating Temperature : -55°C ~ 200°C (TJ)
Mounting Type : Through Hole
Package / Case : TO-204AA, TO-3
Supplier Device Package : TO-204 (TO-3)
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