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产品系列
LND150N3-G
- Manufacturer : Microchip Technology
Packaging : Bulk
Alternate Packaging
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 500V
Current - Continuous Drain (Id) @ 25°C : 30mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) : 0V
Rds On (Max) @ Id, Vgs : 1000 Ohm @ 500μA, 0V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 10pF @ 25V
FET Feature : Depletion Mode
Power Dissipation (Max) : 740mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-92-3
Package / Case : TO-226-3, TO-92-3 (TO-226AA)
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