罗斌森
  • KSB1151YS

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Active
    Transistor Type : PNP
    Current - Collector (Ic) (Max) : 5A
    Voltage - Collector Emitter Breakdown (Max) : 60V
    Vce Saturation (Max) @ Ib, Ic : 300mV @ 200mA, 2A
    Current - Collector Cutoff (Max) : 10μA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 2A, 1V
    Power - Max : 1.3W
    Operating Temperature : 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-225AA, TO-126-3
    Supplier Device Package : TO-126-3

极速报价

型号
品牌 封装 批号 查看
NCL30086BHDR2G ON 10-SOIC New 详细
FMS6400CS ON 8-SOIC New 详细
NLU1GT126MUTCG ON 6-UDFN (1.2x1) New 详细
MM74HCT240MTCX ON 20-TSSOP New 详细
HLMPK150MP4B ON New 详细
UC3843BVDR2 ON 14-SOIC New 详细
FOD3180 ON 8-DIP New 详细
NOIL1SM0300A-WWC ON 48-LCC (14.22x14.22) New 详细
MMSZ4697T1G ON SOD-123 New 详细
2SC4027S-TL-E ON 2-TP-FA New 详细
NCV8501D100R2 ON 8-SOIC New 详细
LM239DR2 ON 14-SOIC New 详细
NCP115AMX280TCG ON New 详细
NVD5414NT4G ON DPAK New 详细
NCV33033DWR2 ON 20-SOIC New 详细
NUD4700SNT1G ON Powermite New 详细
NCP347MTAFTBG ON 10-WDFN (2.5x2) New 详细
NCV380LMU15AATBG ON 6-UDFN (2x2) New 详细
SZMMSZ15ET1G ON SOD-123 New 详细
MMBFJ177LT1G ON SOT-23-3 (TO-236) New 详细