罗斌森
  • HGTP12N60A4

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Obsolete
    Voltage - Collector Emitter Breakdown (Max) : 600V
    Current - Collector (Ic) (Max) : 54A
    Current - Collector Pulsed (Icm) : 96A
    Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 12A
    Power - Max : 167W
    Switching Energy : 55μJ (on), 50μJ (off)
    Input Type : Standard
    Gate Charge : 78nC
    Td (on/off) @ 25°C : 17ns/96ns
    Test Condition : 390V, 12A, 10 Ohm, 15V
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-220-3
    Supplier Device Package : TO-220-3

极速报价

型号
品牌 封装 批号 查看
MC33269DR2-5.0G ON 8-SOIC New 详细
MC7808ACTG ON TO-220AB New 详细
MUR210 ON Axial New 详细
2N3415 ON TO-92-3 New 详细
MC74HC4094ADR2G ON 16-SOIC New 详细
TIP41C ON TO-220-3 New 详细
MC7906CT ON TO-220AB New 详细
BC549TF ON TO-92-3 New 详细
NTD4815NHT4G ON DPAK New 详细
1SMA5921BT3G ON SMA New 详细
MOC3032SR2VM ON 6-SMD New 详细
BUL45D2 ON TO-220AB New 详细
FQPF8N60CYDTU ON TO-220F-3 (Y-Forming) New 详细
NLAS4501DFT2G ON SC-88A (SC-70-5/SOT-353) New 详细
2SC4027T-TL-H ON 2-TP-FA New 详细
NCP59151DS00GEVB ON New 详细
MC100LVEP14DT ON 20-TSSOP New 详细
MC33172PG ON 8-PDIP New 详细
MC74AC20DR2G ON 14-SOIC New 详细
NCP5890MUTXG ON 16-UQFN-EP (3x3) New 详细