罗斌森
  • HGTP12N60A4

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Obsolete
    Voltage - Collector Emitter Breakdown (Max) : 600V
    Current - Collector (Ic) (Max) : 54A
    Current - Collector Pulsed (Icm) : 96A
    Vce(on) (Max) @ Vge, Ic : 2.7V @ 15V, 12A
    Power - Max : 167W
    Switching Energy : 55μJ (on), 50μJ (off)
    Input Type : Standard
    Gate Charge : 78nC
    Td (on/off) @ 25°C : 17ns/96ns
    Test Condition : 390V, 12A, 10 Ohm, 15V
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-220-3
    Supplier Device Package : TO-220-3

极速报价

型号
品牌 封装 批号 查看
DM74ALS520WM ON New 详细
FOD3184TSR2 ON 8-SMD New 详细
LM224DR2G ON 14-SOIC New 详细
MC74HC174AFELG ON New 详细
ML4800IP ON 16-PDIP New 详细
AR0132AT6M00XPEAH-S215-GEVB ON New 详细
74HCU04DR2G ON 14-SOIC New 详细
NCP1012ST65T3G ON SOT-223 New 详细
MV63539MP8 ON New 详细
FAN1540DX ON D-PAK (TO-252) New 详细
SG6521DZ ON 16-PDIP New 详细
AR1335HSSC11SMAAH3-GEVB ON New 详细
FDS6679Z ON 8-SOIC New 详细
BC856BMTF ON SOT-23-3 New 详细
RV4145AM ON 8-SOIC New 详细
ADT7475ARQZ-REEL7 ON 16-QSOP New 详细
GBPC2504 ON GBPC New 详细
74ACT16374SSCX ON New 详细
1N5401 ON DO-201AD New 详细
L78M05T-TL-E ON New 详细