罗斌森
  • HGTG30N60B3D

  • Manufacturer : ON Semiconductor
    Packaging : Tube
    Part Status : Not For New Designs
    Voltage - Collector Emitter Breakdown (Max) : 600V
    Current - Collector (Ic) (Max) : 60A
    Current - Collector Pulsed (Icm) : 220A
    Vce(on) (Max) @ Vge, Ic : 1.9V @ 15V, 30A
    Power - Max : 208W
    Switching Energy : 550μJ (on), 680μJ (off)
    Input Type : Standard
    Gate Charge : 170nC
    Td (on/off) @ 25°C : 36ns/137ns
    Test Condition : 480V, 30A, 3 Ohm, 15V
    Reverse Recovery Time (trr) : 55ns
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-247-3
    Supplier Device Package : TO-247

极速报价

型号
品牌 封装 批号 查看
MBR30H100CTH ON New 详细
CAT25C128LI-G ON 8-PDIP New 详细
SZNUP4114HMR6T1G ON 6-TSOP New 详细
F143-MINI-2-GEVK ON New 详细
NCP1532GEVB ON New 详细
GBU6D ON GBU New 详细
FGH25N120FTDS ON TO-247 New 详细
74LVTH373MTCX ON 20-TSSOP New 详细
FAN7314MX ON 20-SOIC New 详细
MC33269T-5.0 ON TO-220AB New 详细
1N5253BTR ON DO-35 New 详细
LV8127T-MPB-H ON 36-TSSOP New 详细
NSVJ6904DSB6T1G ON 6-CPH New 详细
NM27C010N120 ON 32-DIP New 详细
KSB1116AYTA ON TO-92-3 New 详细
FDMA6023PZT ON 6-MicroFET (2x2) New 详细
NTD12N10G ON DPAK New 详细
MCT52013S ON 6-SMD New 详细
MOC3022TM ON 6-DIP New 详细
MC74VHC138DR2G ON 16-SOIC New 详细