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FJN3312RTA
- Manufacturer : ON Semiconductor
Packaging : Tape & Box (TB)
Part Status : Obsolete
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 40V
Resistor - Base (R1) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
Frequency - Transition : 250MHz
Power - Max : 300mW
Mounting Type : Through Hole
Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package : TO-92-3
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