罗斌森
  • FPN660A

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Obsolete
    Transistor Type : PNP
    Current - Collector (Ic) (Max) : 3A
    Voltage - Collector Emitter Breakdown (Max) : 60V
    Vce Saturation (Max) @ Ib, Ic : 400mV @ 200mA, 2A
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 250 @ 500mA, 2V
    Power - Max : 1W
    Frequency - Transition : 75MHz
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 Long Body
    Supplier Device Package : TO-226

极速报价

型号
品牌 封装 批号 查看
BC337G ON TO-92-3 New 详细
NVB5860NLT4G ON D2PAK-3 New 详细
FFPF06U40STSTU ON TO-220F-2L New 详细
FDD16AN08A0 ON DPAK New 详细
MC74VHCT541ADTG ON 20-TSSOP New 详细
NVGS5120PT1G ON 6-TSOP New 详细
MC33375D-3.0G ON 8-SOIC New 详细
1N6014B ON DO-35 New 详细
MM74HCT374N ON New 详细
LM358DMR2 ON Micro8? New 详细
NCV8570MN280R2G ON 6-DFN (2x2.2) New 详细
MOC8106300 ON 6-DIP New 详细
FDMF6823C_SN00248 ON 40-PQFN (6x6) New 详细
MMBT2222AWT1 ON SC-70-3 (SOT323) New 详细
FDC8884 ON SuperSOT?-6 New 详细
MC74LCX541DTR2G ON 20-TSSOP New 详细
FQP34N20L ON TO-220-3 New 详细
IRFS634B_FP001 ON TO-220F New 详细
DM74AS640WMX ON 20-SOIC New 详细
1V5KE110CA ON DO-201AE New 详细