罗斌森
  • DS1250AB-100IND+

  • Manufacturer : Maxim Integrated
    Packaging : Tube
    Part Status : Active
    Memory Type : Non-Volatile
    Memory Format : NVSRAM
    Technology : NVSRAM (Non-Volatile SRAM)
    Memory Size : 4Mb (512K x 8)
    Write Cycle Time - Word, Page : 100ns
    Access Time : 100ns
    Memory Interface : Parallel
    Voltage - Supply : 4.75V ~ 5.25V
    Operating Temperature : -40°C ~ 85°C (TA)
    Mounting Type : Through Hole
    Package / Case : 32-DIP Module (0.600", 15.24mm)
    Supplier Device Package : 32-EDIP

极速报价

型号
品牌 封装 批号 查看
DS2726G+T&R Maxim 32-TQFN-EP (7x7) New 详细
MAX17411GTM+T Maxim 48-TQFN (6x6) New 详细
MAX4134ESD+ Maxim 14-SOIC New 详细
DS2167 Maxim 24-PDIP New 详细
MAX1792EUA33+ Maxim 8-uMax-EP New 详细
MAX166ACPP Maxim 20-PDIP New 详细
MAX8505EEE+ Maxim 16-QSOP New 详细
MAX135CPI Maxim 28-PDIP New 详细
MAX313LCUE+ Maxim 16-TSSOP New 详细
MAX6310UK41D4-T Maxim SOT-23-5 New 详细
MAX194BCWE Maxim 16-SOIC New 详细
MAX6504UKN005+T Maxim SOT-23-5 New 详细
MAX237ENG+ Maxim 24-PDIP New 详细
MAX4916BELT+T Maxim 6-uDFN (1.5x1.0) New 详细
DS1220Y-200IND+ Maxim 24-EDIP New 详细
MAX366CPA Maxim 8-PDIP New 详细
MAX793RCSE-T Maxim 16-SOIC New 详细
MAX3098EBEEE+ Maxim 16-QSOP New 详细
DS1232LPS Maxim 16-SOIC New 详细
MAX4666CPE Maxim 16-PDIP New 详细