罗斌森
  • DS1230Y-120

  • Manufacturer : Maxim Integrated
    Packaging : Tube
    Part Status : Obsolete
    Memory Type : Non-Volatile
    Memory Format : NVSRAM
    Technology : NVSRAM (Non-Volatile SRAM)
    Memory Size : 256Kb (32K x 8)
    Write Cycle Time - Word, Page : 120ns
    Access Time : 120ns
    Memory Interface : Parallel
    Voltage - Supply : 4.5V ~ 5.5V
    Operating Temperature : 0°C ~ 70°C (TA)
    Mounting Type : Through Hole
    Package / Case : 28-DIP Module (0.600", 15.24mm)
    Supplier Device Package : 28-EDIP

极速报价

型号
品牌 封装 批号 查看
MAX186ACWP+ Maxim 20-SOIC New 详细
MAX16029TG+ Maxim 24-TQFN (4x4) New 详细
MAX6647MUA+ Maxim 8-uMAX New 详细
MAX803SEXR+T Maxim SC-70-3 New 详细
MAX4436EUA Maxim 8-uMAX New 详细
MAX1245AEAP+ Maxim 20-SSOP New 详细
MAXQ610A-0000+ Maxim 32-TQFN-EP (5x5) New 详细
MAX642AESA+ Maxim 8-SOIC New 详细
IH5341IWE Maxim 16-SO New 详细
MAX6829ZWUT+T Maxim SOT-23-6 New 详细
MAX152EPP Maxim 20-PDIP New 详细
MAX16060BTE+ Maxim 16-TQFN (4x4) New 详细
DS1259S+T&R Maxim 16-SOIC New 详细
MAX329EWE+ Maxim 16-SOIC New 详细
MAX3188EEUT/GH9-T Maxim SOT-23-6 New 详细
MAX706TEUA+ Maxim 8-uMAX New 详细
MAX16003DTE+ Maxim 16-TQFN (4x4) New 详细
MAX251ESD Maxim 14-SOIC New 详细
MAX211CAI+ Maxim 28-SSOP New 详细
MAX3443EASA+ Maxim 8-SOIC New 详细