罗斌森
  • 2N5401G

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Obsolete
    Transistor Type : PNP
    Current - Collector (Ic) (Max) : 600mA
    Voltage - Collector Emitter Breakdown (Max) : 150V
    Vce Saturation (Max) @ Ib, Ic : 500mV @ 5mA, 50mA
    Current - Collector Cutoff (Max) : 50nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 10mA, 5V
    Power - Max : 625mW
    Frequency - Transition : 300MHz
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-226-3, TO-92-3 (TO-226AA)
    Supplier Device Package : TO-92-3

极速报价

型号
品牌 封装 批号 查看
1N5988B_T50A ON DO-35 New 详细
MC14069UBDG ON 14-SOIC New 详细
H22A4 ON New 详细
FKN08PN40 ON TO-92-3 New 详细
TIL111SR2M ON 6-SMD New 详细
MC74AC00DG ON 14-SOIC New 详细
100ELT22MX ON 8-SOIC New 详细
MC10EP01DG ON 8-SOIC New 详细
HLMPK105MP4B ON New 详细
MC7812BD2TR4G ON D2PAK New 详细
LM2576D2TR4-012 ON D2PAK-5 New 详细
FDS4685 ON 8-SOIC New 详细
MST6111C ON New 详细
NCV51200MNTXG ON 10-DFN (3x3) New 详细
1N5388BG ON Axial New 详细
MOC208R1M ON 8-SOIC New 详细
FQD3N60TM ON D-Pak New 详细
MMPQ2907 ON 16-SOIC New 详细
SC358NG ON 8-PDIP New 详细
NRVHPM220T3G ON Powermite New 详细