罗斌森
  • 2N5195G

  • Manufacturer : ON Semiconductor
    Packaging : Bulk
    Part Status : Active
    Transistor Type : PNP
    Current - Collector (Ic) (Max) : 4A
    Voltage - Collector Emitter Breakdown (Max) : 80V
    Vce Saturation (Max) @ Ib, Ic : 1.4V @ 1A, 4A
    Current - Collector Cutoff (Max) : 1mA
    DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 1.5A, 2V
    Power - Max : 40W
    Frequency - Transition : 2MHz
    Operating Temperature : -65°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Package / Case : TO-225AA, TO-126-3
    Supplier Device Package : TO-225AA

极速报价

型号
品牌 封装 批号 查看
NCP1010AP130 ON 7-PDIP New 详细
HCPL2531V ON 8-DIP New 详细
4N30SM ON 6-SMD New 详细
NCP305LSQ17T1G ON SC-82AB New 详细
FAN4822IN ON 14-PDIP New 详细
HMA2701 ON 4-SMD New 详细
NCP1200AP60 ON 8-PDIP New 详细
74AC646SC ON 24-SOP New 详细
NGTB25N120FL2WAG ON TO-247-4L New 详细
FDT86246L ON SOT-223-4 New 详细
MC33269D-012 ON 8-SOIC New 详细
MCT22013SD ON 6-SMD New 详细
MC14503BDR2G ON 16-SOIC New 详细
MC1413BPG ON 16-PDIP New 详细
MMBFJ210 ON SOT-23-3 New 详细
1PMT16AT1G ON Powermite New 详细
AMIS30663CANG2RG ON 8-SOIC New 详细
BF246B_J35Z ON TO-92-3 New 详细
MJD50G ON DPAK New 详细
MMSZ5246BT1 ON SOD-123 New 详细